The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition
نویسندگان
چکیده
High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 10 cm 2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 1C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer. r 2008 Elsevier B.V. All rights reserved. PACS: 68.75.+x; 58.55.JK; 78.30. j
منابع مشابه
Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy
Articles you may be interested in Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition Appl. n-Si /i-p-i SiGe /n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy Study of thin film deposition processes employing variable kinetic energy...
متن کاملA novel method for growing polycrystalline Ge layer by using UHVCVD
Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 -C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperatur...
متن کاملAtomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition
متن کامل
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD
The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(1 1 1) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of th...
متن کاملOne-step Ge/Si epitaxial growth.
Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray ...
متن کامل